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FFB2222AD Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FFB2222AD Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 7 page ![]() 2014. 03. 10 1/7 SEMICONDUCTOR TECHNICAL DATA FFB2222AD Revision No : 0 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 75 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current – Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Package Dissipation (Note 1) TA = 25℃ PD 150 mW Thermal Resistance, Junction to Ambient R JA 833 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C Q1 (1) (2) (3) (4) (5) (6) Q2 Dual General Purpose Switching Transistors NPN Silicon 1 3 2 6 4 5 SOT-363 (SC-88) We declare that material of product compliance with ROHS requirements. ORDERING INFORMATION Device Shipping FFB2222AD 3000/Tape & Reel Marking XX |
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