PESD2ETH-X datasheet(4/12 Pages) NEXPERIA

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Nexperia

PESD2ETH-X

Ultra low capacitance double rail-to-rail ESD protection diode

PESD2ETH-X

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Product data sheet

24 February 2016

4 / 12

8. Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VRWM

reverse standoff

voltage

Tamb = 25 °C

5.5

VBR

breakdown voltage

IR = 1 mA; Tamb = 25 °C

[1]

forward voltage

IF = 1 mA; Tamb = 25 °C

[2]

0.7

reverse current

VR = 3 V; Tamb = 25 °C

[3]

100

[2]

1.5

[4]

0.6

diode capacitance

f = 1 MHz; VR = 0 V; Tamb = 25 °C

[1]

[1] Measured from pin 4 to ground.

[2] Measured from pin 2 and 3 to ground.

[3] Measured from pin 2, 3 and 4 to ground.

[4] Measured from pin 2 to pin 3.

VR (V)

aaa-022056

0.8

1.2

0.4

1.6

2.0

(pF)

f = 1 MHz; Tamb = 25 °C

Measured from pin 2 and 3 to ground.

Fig. 2. Diode capacitance as a function of reverse

voltage; typical values

VR (V)

aaa-022058

0.4

0.6

0.2

0.8

1.0

(pF)

f = 1 MHz; Tamb = 25 °C

Measured from pin 2 to pin 3.

Fig. 3. Diode capacitance as a function of reverse

voltage; typical values

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