PSMN014-60LS datasheet(7/15 Pages) NEXPERIA

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PSMN014-60LS

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Product data sheet

Rev. 3 — 8 December 2011

6 of 14

NXP Semiconductors

PSMN014-60LS

N-channel DFN3333-8 60 V 14 m

Ω standard level MOSFET

Source-drain diode

VSD

source-drain voltage

IS =15A; VGS =0 V; Tj =25°C;

see Figure 16

0.85

1.2

trr

reverse recovery time

IS =15A; dIS/dt = 100 A/µs;

VGS =0V; VDS =30V

-33

-ns

recovered charge

Table 6.

Characteristics …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 7.

Forward transconductance as a function of

drain current; typical values

Fig 8.

Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

003aae472

0.5

1.5

VDS(V)

(A)

6.0

7.0

4.5

VGS(V) = 4

5.0

5.5

003aae473

0246

VGS(V)

(A)

Tj = 25 °C

Tj = 175 °C

003aae474

2030

4050

ID (A)

gfs

(S)

003aae475

500

1000

1500

2000

VGS(V)

(pF)

Ciss

Crss

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