MMBTA10 datasheet(2/3 Pages) PJSEMI

Part #	MMBTA10

Description	NPN Transistor

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

Direct Link	http://www.pingjingsemi.com/MainEn/Main.aspx

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2 / 3 page

MMBTA10

NPN Transistor

2 / 3

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at VCE = 10 V, IC = 4 mA

HFE

Collector Base Cutoff Current

at VCB = 25 V

ICBO

100

Emitter Base Cutoff Current

at VEB = 2 V

IEBO

100

Emitter Base Breakdown Voltage

at IE = 10 μA

V(BR)EBO

Collector Emitter Saturation Voltage

at IC = 4 mA, IB = 0.4 mA

VCE(sat)

0.5

Base Emitter Saturation Voltage

at VCE = 10 V, IC = 4 mA

VBE(on)

0.95

Transition Frequency

at VCE = 10 V, IC = 4 mA, f = 100 MHz

650

MHz

Collector Base Capacitance

at VCB = 10 V, f = 1 MHz

Cob

0.7

Collector Base Breakdown Voltage

at IC = 100 μA

V(BR)CBO

Collector Emitter Breakdown Voltage

at IC = 1 mA

V(BR)CEO

www.pingjingsemi.com

Revision：1.0 Mar-2019

Crb

0.35

0.65

Collector Base Feedback Capacitance

at VCB = 10 V, f = 1 MHz

MMBTA10 Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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