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MMBTA56 Datasheet(PDF) 3 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # MMBTA56
Description  PNP Transistor
PDF  4 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

MMBTA56 Datasheet(HTML) 3 Page - Dongguan Pingjingsemi Technology Co., Ltd,

  MMBTA56 Datasheet HTML 1Page - Dongguan Pingjingsemi Technology Co., Ltd, MMBTA56 Datasheet HTML 2Page - Dongguan Pingjingsemi Technology Co., Ltd, MMBTA56 Datasheet HTML 3Page - Dongguan Pingjingsemi Technology Co., Ltd, MMBTA56 Datasheet HTML 4Page - Dongguan Pingjingsemi Technology Co., Ltd,  
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MMBTA56
PNP Transistor
www.pingjingsemi.com
3 / 4
Revison：1.0 Apr-2019
Typical Characteristics Curves
-0.3
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-30
-10
-3
-1
-100
-10
-1
-0.1
1
10
100
1000
0
25
125
150
0
100
200
300
400
-300
-100
-30
-10
-3
-1
-0.1
-100
-1000
-10
-30
-100
10
100
1000
-100
0
30
60
90
120
150
-0
-1
-2
-3
-4
-5
-6
-0
-40
-80
-120
-160
V
BE
——
T
a=100
℃
T
a=25
℃
V
CE=-1V
BASE-EMITTER VOLTAGE V
BE
(V)
-10
-30
f=1MHz
I
E=0/IC=0
T
a=25
℃
V
CB / VEB
C
ob / Cib
——
3
300
30
C
ob
C
ib
-0.3
-20
-3
REVERSE BIAS VOLTAGE V (V)
P
C
—— T
a
50
75
100
AMBIENT TEMPERATURE T
a
(℃)
-500
-0.3
β=10
T
a=100
℃
V
CEsat
—— I
C
T
a=25
℃
-1
-3
-10
-30
COLLECTOR CURRENT I
C
(mA)
-3
COMMON EMITTER
V
CE=-1V
30
T
a=100
℃
T
a=25
℃
h
FE
—— I
C
300
-300
COLLECTOR CURRENT I
C
(mA)
-500
I
C
COLLECTOR CURRENT I
C
(mA)
V
CE=-1V
T
a=25
℃
f
T
—— I
C
COMMON
EMITTER
T
a=25
℃
-
-400uA
-320uA
-240uA
-560uA
-480uA
-640uA
-800uA
-720uA
160uA
I
B=-80uA
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Static Characteristic



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