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MMBTSC2412 Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # MMBTSC2412
Description  NPN Transistor
PDF  4 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

MMBTSC2412 Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

  MMBTSC2412 Datasheet HTML 1Page - Dongguan Pingjingsemi Technology Co., Ltd, MMBTSC2412 Datasheet HTML 2Page - Dongguan Pingjingsemi Technology Co., Ltd, MMBTSC2412 Datasheet HTML 3Page - Dongguan Pingjingsemi Technology Co., Ltd, MMBTSC2412 Datasheet HTML 4Page - Dongguan Pingjingsemi Technology Co., Ltd,  
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MMBTSC2412
NPN Transistor
www.pingjingsemi.com
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Revision
：1.0 May-2018
Electrical Characteristics at TA= 25℃
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 6 V, IC = 1mA
Q
R
S
hFE
hFE
hFE
120
180
270
-
-
-
270
390
560
-
-
-
Collector Base Cutoff Current
at VCB = 60 V
ICBO
-
100
nA
Emitter Base Cutoff Current
at VEB = 7 V
IEBO
-
100
nA
Collector Base Breakdown Voltage
at IC = 50 µA
V(BR)CBO
60
-
V
Collector Emitter Breakdown Voltage
at IC = 1 mA
V(BR)CEO
50
-
V
Emitter Base Breakdown Voltage
at IE = 50 µA
V(BR)EBO
7
-
V
Collector Emitter Saturation Voltage
at IC = 50 mA, IB = 5 mA
VCE(sat)
-
0.4
V
Base Emitter Saturation Voltage
at IC = 50 mA, IB = 5 mA
VBE(sat)
-
1
V
Current Gain Bandwidth Product
at VCE = 12 V, IE = 2 mA, f = 100 MHz
fT
-
180
-
MHz
Collector Output Capacitance
at VCE = 12 V, f = 1 MHz
Cob
-
3.5
pF



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