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T353-800TP Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # T353-800TP
Description  Phase Control Thysistors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

T353-800TP Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
T353-800TP
Phase Control Thysistors
FEATURES
·
Full diffusion process
·
High frequency operation
·
Low forward voltage drop
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
High power converters
·
Phase controlled rectifying
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VRRM
Repetitive Peak Reverse Voltage
3500
V
VDRM
Repetitive Peak Forward Blocking Voltage
3500
V
IT(AV)
Average Forward Current
Half-sine wave,180°conduction,
Tc=88℃
800
A
IT(RMS)
RMS on-state current
Tc=88℃
1256
A
ITSM
Surge on-state current
10 ms, sinusoidal wave shape,
180°conduction, Tj = 125℃
14
KA
I2t
I2t for fusing
10 ms, sinusoidal wave shape
980
KA2S
TJ
Junction Temperature
-40~125
℃
Tstg
Storage Temperature Range
-40~140
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth( j-c)
Thermal Resistance, Junction to Case
0.023
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VTM
Forward Voltage Drop
ITM = 2512 A
2.05
V
IDRM
IRRM
peak reverse and off-state
leakage current
VD=VDRM
VR=VRRM
100
mA
IGT
DC gate current required to trigger
VD=12V,TJ = 25 ℃
200
mA
VGT
DC gate voltage required to trigger
VD=12V,TJ = 25 ℃
4.5
V
tq
Typical turn-off time
ITM = 1000A, di/dt = 25A/µs, VR =
50V, dV/dt = 30V/µs, TJ = 125 ℃
350
µs


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