MTP2P50E

http://onsemi.com

2

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

500

–

–

564

–

–

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 500 Vdc, VGS = 0 Vdc)

(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

–

–

–

–

10

100

µAdc

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0)

IGSS

–

–

100

nAdc

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

–

3.0

4.0

4.0

–

Vdc

mV/

°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc)

RDS(on)

–

4.5

6.0

Ohm

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 2.0 Adc)

(ID = 1.0 Adc, TJ = 125°C)

VDS(on)

–

–

9.5

–

14.4

12.6

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc)

gFS

0.5

–

–

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vd

V

0 Vd

Ciss

–

845

1183

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

–

100

140

Reverse Transfer Capacitance

f = 1.0 MHz)

Crss

–

26

52

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

td(on)

–

12

24

ns

Rise Time

(VDD = 250 Vdc, ID = 2.0 Adc,

VGS =10Vdc

tr

–

14

28

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

td(off)

–

21

42

Fall Time

RG 9.1 Ω)

tf

–

19

38

Gate Charge

(S

Fi

8)

QT

–

19

27

nC

(See Figure 8)

(VDS = 400 Vdc, ID = 2.0 Adc,

Q1

–

3.7

–

(VDS 400 Vdc, ID 2.0 Adc,

VGS = 10 Vdc)

Q2

–

7.9

–

Q3

–

9.9

–

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (Note 1.)

(IS = 2.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

–

–

2.3

1.85

3.5

–

Vdc

Reverse Recovery Time

(S

Fi

14)

trr

–

223

–

ns

(See Figure 14)

(IS =20Adc VGS = 0 Vdc

ta

–

161

–

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

–

62

–

Reverse Recovery Stored

Charge

dIS/dt = 100 A/µs)

QRR

–

1.92

–

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25

″ from package to center of die)

LD

–

–

3.5

4.5

–

–

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

–

7.5

–

nH

1. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.