PJM60H12MNSA datasheet(2/6 Pages) PJSEMI

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PJM60H12MNSA

N- Channel Depletion mode MOSFETS

www.pingjingsemi.com

Revision：1.0 Oct-2018

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Electrical Characteristics

(TC=25℃, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF Characteristics

Drain-Source Breakdown Voltage

V(BR)DSX VGS = -5V, ID = 250μA

600

Gate Leakage Current

IGSS

VGS = ±10V

±100

Off-state Drain to Source Current

ID(off)

VDS =600V, VGS = -5V

0.1

μA

VDS =480V, VGS = -5V,

Ta=125

μA

ON Characteristics

Gate Threshold Voltage

VGS(th) VDS = 3V, ID = 8μA

-2.7

-1.8

-1

On-state drain current

IDSS

VGS = 0V, VDS = 25V

Drain-Source On-Resistance

RDS(ON)

VGS = 0V, ID = 3mA

350

700

VGS = 10V, ID = 16mA

400

800

Dynamic Characteristics

Forward transconductance

gfs

VDS = 50V, ID = 0.01A

Input Capacitance

Ciss

VDS = 25V,

VGS = -5V,

f = 1MHz

Output Capacitance

Coss

4.53

Reverse Transfer Capacitance

Crss

1.08

Switching Characteristics

Turn-On Delay Time

td(on)

VDD=300V, VGS=-5…7V

RG=6Ω, ID=0.01A

9.9

Turn-On Rise Time

55.8

Turn-Off DelayTime

td(off)

56.4

Turn-Off FallTime

136

Total Gate Charge

VDD=400V,VGS=-5V to 5V,

ID=0.01A

1.14

Gate-Source Charge

Qgs

0.5

Gate-Drain Charge

Qgd

0.37

Drain-source Diode Characteristics

Diode Forward Current

Ta=25

0.025

Pulse Diode Forward Current

ISM

0.1

Forward Diode Voltage

VSD

VGS = -5V, IF = 16mA

1.2

Gate-source Zener diode

Gate-source breakdown voltage

VGSO

IGS= ±1mA (Open Drain)

°C

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