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PJM123NSA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM123NSA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 6 page ![]() PJM123NSA N- Enhancement Mode Field Effect Transistor www.pingjingsemi.com Revision:1. 1 Jan-2019 1 / 6 Features ◆ Surface Mount Package ◆ Low RDS(ON) ◆ ESD protected(HBM) up to 2KV Applications ◆ Switching Application ◆ Small Servo Motor Controls Absolute Maximum Ratings (TC=25 ℃, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Note1 ID 0.17 A Pulsed Drain Current tp=10 μs IDM 0.68 Power Dissipation PD 0.9 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 to 150 °C Thermal Characteristics Parameter Symbol Typ. Units Maximum Junction-to-Ambient Note1 RθJA 139 °C/W D S G SOT-23 Schematic diagram 1. Gate 2.Source 3.Drain Marking: B123 |
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