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PJM2324NSA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # PJM2324NSA
Description  N- Enhancement Mode Field Effect Transistor
PDF  6 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM2324NSA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM2324NSA
N- Enhancement Mode Field Effect Transistor
Absolute Maximum Ratings
(TA=25℃, unless otherwise noted)
1. Gate 2.Source 3.Drain
Marking: S24
Schematic diagram
SOT-23
3
1
2
Gate
Source
Drain
Features
Applications
Trench FET Power MOSFET
RDS(ON) < 234mΩ (VGS = 10V)
RDS(ON) < 278mΩ (VGS = 4.5V)
DC/DC Converter
Load Switching
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current
ID
2
A
Pulsed Drain Current Note 1
IDM
8
A
Total Power Dissipation
PD
0.35
W
Operating Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
- 55 to + 150
℃
Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction to Ambient Note2
RθJA
357
℃
/
W
1 / 6
www.pingjingsemi.com
Revision：1.0 Sep-2018


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