MGSF2P02HD datasheet(2/8 Pages) ONSEMI

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MGSF2P02HD

http://onsemi.com

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

Drain−to−Gate Voltage (RGS = 1.0 MΩ)

VDGR

Gate−to−Source Voltage

VGS

±9

Drain Current − Continuous

Drain Current − Single Pulse (tp ≤ 10 ms)

Total Power Dissipation @ TC = 25°C

Total Power Dissipation @ TC = 85°C

Thermal Resistance − Junction to Ambient (Note 1.)

IDM

RqJA

1.3

400

210

312

°C/W

Drain Current − Continuous

Drain Current − Single Pulse (tp ≤ 10 ms)

Total Power Dissipation @ TC = 25°C

Total Power Dissipation @ TC = 85°C

Thermal Resistance − Junction to Ambient (Note 2.)

IDM

RqJA

2.9

2.0

1.0

62.5

°C/W

Operating and Storage Temperature Range

TJ, Tstg

− 55 to 150

°C

Single Pulse Drain Source Avalanche Energy VDD = 20 V, VGS = 4.5 Vpk,

IL = 3.6 Apk, L = 25 mH, RG = 25 W

EAS

160

THERMAL CHARACTERISTICS

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from Case for 5 seconds

260

°C

1. Minimum FR−4 or G−10 PCB, Operating to Steady State.

2. Mounted onto a 2

″ square FR−4 Board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Operating time ≤5 seconds.

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