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SL34F Datasheet(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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SL34F Datasheet(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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1 / 3 page ![]() LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODES DN:T19716A0 https://www.microdiode.com Rev:2019A0 Page :1 SL34F Features ℃ Dimensions in inches and (millimeters) Reverse Voltage - 40 Volts Forward Current - 3.0 Ampere SMAF 0.193(4.90) 0.173(4.40) 0.047(1.20) 0.031(0.80) 0.008(0.20) 0.005(0.12) 0.047(1.20) 0.035(0.90) 0.146(3.70) 0.130(3.30) 0.063 (1.60) 0.051 (1.30) 0.106(2.70) 0.094(2.40) Mechanical Data Case : molded plastic body Terminals : Solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.00 ounce, 0.0 7 grams Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Maximum Ratings And Electrical Characteristics Parameter SYMBOLS SL34F UNITS Marking Code MDD SL34 F Maximum repetitive peak reverse voltage VRRM 40 V Maximum RMS voltage VRMS 28 V Maximum DC blocking voltage VDC 40 V Maximum average forward rectified current at TL(see fig.1) I(AV) 3.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 80 A Maximum instantaneous forward voltage at 3.0A VF 0.45 V Maximum DC reverse current TA=25℃ at rated DCblocking voltage TA=125℃ IR 0.3 5.0 mA Typical junction capacitance (NOTE 1) CJ 450 pF Typical thermal resistance (NOTE 2) RJA 60.0 ℃/ W Operating junction temperature range TJ -55 to +1 50 ℃ Storage temperature range TSTG -55 to +150 ℃ Note: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 2.0x2.0”(5.0x5.0cm) copper pad areas 3.The typical data above is for reference only. |
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