AFSC5G35D35

1

RF Device Data

NXP Semiconductors

Power Amplifier Module for LTE and

5G

The AFSC5G35D35 is a fully integrated Doherty power amplifier module

designed for wireless infrastructure applications that demand high

performance in the smallest footprint. Ideal for applications in massive MIMO

systems, outdoor small cells, and low power remote radio heads. The

field--proven LDMOS power amplifiers are designed for TDD and FDD LTE

systems.

Carrier Center

Frequency

Gain

(dB)

ACPR

(dBc)

PAE

(%)

3400 MHz

25.3

–27.6

37.1

3500 MHz

24.9

–30.8

36.7

3600 MHz

24.7

–32.9

35.4

1. All data measured with device soldered in NXP reference circuit.

Features

 Frequency: 3400–3600 MHz

 Advanced high performance in--package Doherty

 Fully matched (50 ohm input/output, DC blocked)

 Designed for low complexity analog or digital linearization systems

Document Number: AFSC5G35D35

Rev. 2, 05/2019

NXP Semiconductors

Technical Data

3400–3600 MHz, 26 dB, 3 W Avg.

AIRFAST POWER AMPLIFIER

MODULE

AFSC5G35D35

 2018–2019 NXP B.V.