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DN3525 Datasheet(PDF) 1 Page - Microchip Technology

Part # DN3525
Description  N-Channel Depletion-Mode Vertical DMOS FET
PDF  14 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

DN3525 Datasheet(HTML) 1 Page - Microchip Technology

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 2018 Microchip Technology Inc.
DS20005705A-page 1
DN3525
Features
• High Input Impedance
• Low Input Capacitance
• Fast Switching Speeds
• Low On-Resistance
• Free from Secondary Breakdown
• Low Input and Output Leakage
Applications
• Normally-On Switches
• Solid-State Relays
•Converters
• Constant-Current Sources
• Power Supply Circuits
• Telecommunication Switches
General Description
The DN3525 is a low-threshold Depletion-mode
(normally-on) transistor that uses an advanced vertical
DMOS structure and a well-proven silicon gate
manufacturing process. This combination produces a
device with the power handling capabilities of bipolar
transistors and the high input impedance and positive
temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from
thermal
runaway
and
thermally
induced
secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where high breakdown voltage, high input impedance,
low input capacitance and fast switching speeds are
desired.
Package Type
See Table 3-1 for pin information.
GATE
SOURCE
DRAIN
DRAIN
3-lead SOT-89
(Top view)
N-Channel Depletion-Mode Vertical DMOS FET


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