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SCM2000MKF Datasheet(PDF) 7 Page - Sanken electric |
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SCM2000MKF Datasheet(HTML) 7 Page - Sanken electric |
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7 / 44 page ![]() SCM2000MKF Series SCM2000MKF-DSE Rev.1.0 SANKEN ELECTRIC CO., LTD 7 Nov. 12, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2018 3.2. Bootstrap Diode Characteristics Parameter Symbol Conditions Min. Typ. Max. Unit Remarks Bootstrap Diode Leakage Current ILBD VR = 600 V — — 10 μA Bootstrap Diode Forward Voltage VFB IFB = 0.15 A — 3.0 — V 3.3. Thermal Resistance Characteristics Parameter Symbol Conditions Min. Typ. Max. Unit Remarks Junction-to-Case Thermal Resistance ( 1) R(j-c)Q ( 2) 1 element operating (IGBT) — — 3 SCM2007MKF SCM2008MKF R(j-c)F ( 3) 1 element operating (freewheeling diode) — — 4 SCM2007MKF SCM2008MKF (1) Refers to a case temperature at the measurement point described in Figure 3-1, below. (2) Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient thermal characteristics, see Section 15.1. (3) Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case. Measurement point 1 24 33 25 Figure 3-1. Case Temperature Measurement Point |
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