BAS521 datasheet(3/8 Pages) PHILIPS

3 / 8 page

2003 Aug 12

Philips Semiconductors

Product speciﬁcation

High voltage switching diode

BAS521

ELECTRICAL CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp = 300 µs; δ = 0.02.

THERMAL CHARACTERISTICS

Notes

1. Soldering point of the cathode tab.

2. Refer to SOD523 (SC-79) standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VBR

breakdown voltage

IR = 100 µA

300

340

−

forward voltage

IF = 100 mA; note 1

−

0.95

1.1

reverse current

VR = 250 V

−

150

VR = 250 V; Ta = 150 °C

−

100

µA

trr

reverse recovery time

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω; measured at

IR =3mA

−

diode capacitance

VR = 0 V; f = 1 MHz

−

0.4

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to solder point

note 1

120

K/W

Rth j-a

thermal resistance from junction to ambient

note 2

500

K/W

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