SSM6P35AFE datasheet(3/8 Pages) TOSHIBA

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SSM6P35AFE

5. Electrical Characteristics

Electrical Characteristics

5.1.

5.1. Static Characteristics (Unless otherwise specified, T

Static Characteristics (Unless otherwise specified, T

Static Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



)(Q1, Q2 Common)

)(Q1, Q2 Common)

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-resistance

Forward transfer admittance

(Note 1)

(Note 2)

(Note 3)

Symbol

IGSS

IDSS

V(BR)DSS

V(BR)DSX

Vth

RDS(ON)

|Yfs|

Test Condition

VDS = 0 V, VGS = ±10 V

VDS = -20 V, VGS = 0 V

ID = -1 mA, VGS = 0 V

ID = -1 mA, VGS = 10 V

VDS = -10 V, ID = -100 µA

ID = -10 mA, VGS = -1.2 V

ID = -20 mA, VGS = -1.5 V

ID = -50 mA, VGS = -1.8 V

ID = -150 mA, VGS = -2.5 V

ID = -150 mA, VGS = -4.5 V

VDS = -10 V, ID = -100 mA

Min



-20

-10

-0.3



Typ.



3.2

2.3

2.0

1.5

1.1

430

Max

±1

-1



-1

4.0

2.9

2.1

1.4



Unit

µA

Ω

Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-

source breakdown voltage is lowered in this mode.

Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-100 µA

for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be

lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).

Take this into consideration when using the device.

Note 3: Pulse measurement.

5.2.

5.2. Dynamic Characteristics (Unless otherwise specified, T

Dynamic Characteristics (Unless otherwise specified, T

Dynamic Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



)(Q1, Q2 Common)

)(Q1, Q2 Common)

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time (rise time)

Switching time (turn-on delay time)

Switching time (fall time)

Switching time (turn-off delay time)

Symbol

Ciss

Crss

Coss

td(on)

td(off)

Test Condition

VDS = -10 V, VGS = 0 V,

f = 1 MHz

VDD = -10 V, ID = -50 mA,

VGS = 0 to -4.5 V, RG = 10 Ω

Duty ≤ 1%, VIN: tr, tf < 5 ns,

Common source, See Chapter 5.3.

Min



Typ.

145

420

Max



Unit

5.3.

5.3. Switching Time Test Circuit

Switching Time Test Circuit

Fig.

Fig. 5.3.1

5.3.1

5.3.1 Switching Time Test Circuit

Switching Time Test Circuit

Fig.

Fig. 5.3.2

5.3.2

5.3.2 Input Waveform/Output Waveform

Input Waveform/Output Waveform

2017-06-22

Rev.2.0

SSM6P35AFE Datasheet(PDF) 3 Page - Toshiba Semiconductor

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