MRFX600H MRFX600HS MRFX600GS

1

RF Device Data

NXP Semiconductors

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR

industrial, medical, broadcast, aerospace and mobile radio applications. Their

unmatched input and output design supports frequency use from 1.8 to

400 MHz.

Typical Performance

Frequency

(MHz)

Signal Type

(V)

(W)

(dB)

(%)

CW

62

680 CW

21.3

83.0

Pulse

(100 sec, 20% Duty Cycle)

65

600 Peak

26.4

74.4

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

(W)

Test

Voltage

Result

Pulse

(100 sec, 20%

Duty Cycle)

> 65:1 at all

Phase Angles

2.5 Peak

(3 dB

Overdrive)

65

No Device

Degradation

1. Measured in 87.5–108 MHz broadband reference circuit (page 5).

2. The values shown are the center band performance numbers across the indicated

frequency range.

3. Measured in 230 MHz production test fixture (page 10).

Features

 Unmatched input and output allowing wide frequency range utilization

 Output impedance fits a 4:1 transformer

 Device can be used single--ended or in a push--pull configuration

 Characterized from 30 to 65 V for extended power range

 High breakdown voltage for enhanced reliability

 Suitable for linear application with appropriate biasing

 Integrated ESD protection with greater negative gate--source voltage range

for improved Class C operation

 Included in NXP product longevity program with assured supply for a

minimum of 15 years after launch

Typical Applications

 Industrial, scientific, medical (ISM)

– Laser generation

– Plasma generation

– Particle accelerators

– MRI, RF ablation and skin treatment

– Industrial heating, welding and drying systems

 Radio and VHF TV broadcast

 Aerospace

– HF communications

– Radar

 Mobile radio

– HF and VHF communications

– PMR base stations

Document Number: MRFX600H

Rev. 0, 09/2018

NXP Semiconductors

Technical Data

1.8–400 MHz, 600 W CW, 65 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

MRFX600H

MRFX600HS

MRFX600GS

NI--780S--4L

MRFX600HS

NI--780H--4L

MRFX600H

NI--780GS--4L

MRFX600GS

Figure 1. Pin Connections

(Top View)

Drain A

31

42 Drain B

Gate A

Gate B

Note: The backside of the package is the

source terminal for the transistor.

 2018 NXP B.V.