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IXTP60N10T Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IXTP60N10T
Description  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXTP60N10T Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IXTP60N10T
·
FEATURES
·
Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V
·
Fully characterized avalanche voltage and current
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATION
·
DC/DC Converters
·
High Current Switching Applications
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±
30
V
ID
Drain Current-Continuous
60
A
IDM
Drain Current-Single Pulsed
180
A
PD
Total Dissipation @TC=25℃
176
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Junction-to-case thermal resistance
0.85
℃
/W


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