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PBLS6002D Datasheet(PDF) 1 Page - NXP Semiconductors

Part # PBLS6002D
Description  60 V PNP BISS loadswitch
PDF  16 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBLS6002D Datasheet(HTML) 1 Page - NXP Semiconductors

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1.
Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and
NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted
Device (SMD) plastic package.
1.2 Features
s Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
s Low threshold voltage (< 1 V) compared to MOSFET
s Low drive power required
s Space-saving solution
s Reduction of component count
1.3 Applications
s Supply line switches
s Battery charger switches
s High-side switches for LEDs, drivers and backlights
s Portable equipment
1.4 Quick reference data
[1]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
PBLS6002D
60 V PNP BISS loadswitch
Rev. 01 — 23 June 2005
Product data sheet
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage
open base
-
-
−60
V
IC
collector current (DC)
[1] --
−1A
RCEsat
collector-emitter saturation
resistance
IC = −1A;
IB = −100 mA
[2] -
255
340
m
TR2; NPN resistor-equipped transistor
VCEO
collector-emitter voltage
open base
-
-
50
V
IO
output current (DC)
-
-
100
mA
R1
bias resistor 1 (input)
3.3
4.7
6.1
k
R2/R1
bias resistor ratio
0.8
1
1.2


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