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AO4826 Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part # AO4826
Description  Dual N-Channel 60 V (D-S) 175 째C MOSFET
PDF  9 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AO4826 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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Dual N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
Notes
a. Package limited.
b. Pulse test; pulse width
≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
VDS (V)
60
RDS(on) (
Ω) at VGS = 10 V
0.040
RDS(on) (
Ω) at VGS = 4.5 V
0.055
ID (A) per leg
7
Configuration
Dual
Top View
SO-8 Dual
1
S
1
2
G
1
3
S
2
1
2
G
3
S
2
4
G
2
D
1
7
D
2
6
D
2
5
D
1
8
N-Channel MOSFET
G1
D1
S1
N-Channel MOSFET
G2
D2
S2
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
ID
7
A
TC = 125 °C
4
Continuous Source Current (Diode Conduction) a
IS
3.6
Pulsed Drain Current b
IDM
28
Single Pulse Avalanche Current
L = 0.1 mH
IAS
18
Single Pulse Avalanche Energy
EAS
16.2
mJ
Maximum Power Dissipation b
TC = 25 °C
PD
4
W
TC = 125 °C
1.3
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
PCB Mount c
RthJA
110
°C/W
Junction-to-Foot (Drain)
RthJF
34
www.VBsemi.tw
E-mail：China@VBsemi TEL:86-755-83251052
AO4826
1


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