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DS280DF810ABVT Datasheet(PDF) 7 Page - Texas Instruments |
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DS280DF810ABVT Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 51 page ![]() 7 DS280DF810 www.ti.com SNLS538A – SEPTEMBER 2016 – REVISED OCTOBER 2019 Product Folder Links: DS280DF810 Submit Documentation Feedback Copyright © 2016–2019, Texas Instruments Incorporated Pin Functions (continued) PIN TYPE INTERNAL PULL-UP/ PULL-DOWN DESCRIPTION NAME NO. GND A1, A2, A4, A6, A8, A10, A12, A14, A15, B2, B4, B6, B8, B10, B12, B14, C2, C3, C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, D1, D2, D5, D7, D9, D11, D14, D15, E11, F1, F2, F5, F7, F9, F11, F14, F15, G2, G3, G4, G5, G6, G7, G8, G9, G10, G11, G12, G13, G14, H2, H4, H6, H8, H10, H12, H14, J1, J2, J4, J6, J8, J10, J12, J14, J15 Power None Ground reference. The GND pins on this device should be connected through a low-resistance path to the board GND plane. (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7 Specifications 7.1 Absolute Maximum Ratings Over operating free-air temperature range (unless otherwise noted). (1) MIN MAX UNIT VDDABSMAX Supply voltage (VDD) -0.5 2.75 V VIO2.5V,ABSMAX 2.5 V I/O voltage (LVCMOS, CMOS and Analog) -0.5 2.75 V VIO3.3V,ABSMAX Open Drain Voltage (SDA, SDC, INT_N) and LVCMOS Input Voltage (READ_EN_N) -0.5 4.0 V VINABSMAX Signal input voltage (RXnP, RXnN) -0.5 2.75 V VOUTABSMAX Signal output voltage (TXnP, TXnN) -0.5 2.75 V TJABSMAX Junction temperature 150 ºC Tstg Storage temperature -40 150 ºC (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions. Pins listed as ±2,000 V may actually have higher performance. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions. Pins listed as ±1,000 V may actually have higher performance. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2,000 V Charged-device model (CDM), per JEDEC specification JESD22- C101(2) ±1,000 V |
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