TC6321 datasheet(3/26 Pages) MICROCHIP

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DS20005724A-page 3

TC6321

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Drain-to-Source Voltage..........................................................................................................................................BVDSX

Drain-to-Gate Voltage ............................................................................................................................................ BVDGX

Operating and Storage Temperature.......................................................................................................-55°C to +175°C

† Notice:

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

N-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS

Unless otherwise noted, TA =TJ = +25°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

DC Parameters (Note 1)

Drain-to-Source Breakdown

Voltage

BVDSS

200

—

VGS = 0V, ID = 2.0 mA

Gate Threshold Voltage

VGS(th)

1.0

—

2.0

VGS =VDS, ID = 1.0 mA

Change in VGS(th) with

Temperature

∆VGS(th)

—

–4.5

mV/ºC

VGS =VDS, ID = 1.0 mA

(Note 2)

Gate-to-Source Shunt Resistor

RGS

—

kΩ

IGS = 100 μA

Gate-to-Source Zener Voltage

VZGS

13.2

—

IGS = 2 mA

Zero Gate Voltage Drain

Current

IDSS

—

10.0

μAVDS = 200V

VGS = 0V

——

1.0

VDS = 200V, VGS = 0V

TJ = +125°C (Note 2)

On-State Drain Current

ID(ON)

1.0

—

VGS =4.5V, VDS = 25V

2.0

—

VGS = 10V, VDS = 25V

Static Drain-to-Source On-State

Resistance

RDS(ON)

——

8.0

Ω

VGS = 4.5V, ID =150 mA

——

7.0

VGS = 10V, ID = 1.0A

Change in RDS(ON) with

Temperature

∆RDS(ON)

——

1.0

%/ºC

VGS = 4.5V, ID =150 mA

(Note 2)

AC Parameters (Note 2)

Forward Transconductance

GFS

400

—

mmho VGS = 25V, ID= 500 mA

Input Capacitance

CISS

——

110

VGS = 0V

VDS = 25V

f = 1.0 MHz

Common Source Output

Capacitance

COSS

——

Reverse Transfer Capacitance

CRSS

——

Turn-On Delay Time

td(ON)

——

VGS = 10V

VDS = 25V

ID = 1.0A

RGEN = 25Ω

Rise Time

——

Turn-Off Delay Time

td(OFF)

——

Fall Time

——

Note 1:

Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty

cycle.

Specification is obtained by characterization and is not 100% tested.

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