FTC9012 datasheet(1/2 Pages) FS

Part #	FTC9012

Description	TRANSISTOR (PNP)

PDF	2 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 2 page

SEMICONDUCTOR

TECHNICAL DATA

FTC9012

2007. 12. 18

1/2

Revision No : 0

FTC9012

TRANSISTOR (PNP)

FEATURES

Complementary to FTC9012

Excellent h FE linearity

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-25

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-500

mA

PC

Collector Power Dissipation

625

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector -base breakdown voltage

V(BR)CBO

IC= -100

μA, IE=0

-40

V

Collector -emitter breakdown voltage

V(BR)CEO

IC= -1mA,IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100

μA, I

C=0

-5

V

Collector cut-off current

ICBO

VCB=-40V, IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE=-20V, IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB= -5V, IC=0

-0.1

μA

hFE

VCE=-1V,IC=-50mA

64

400

DC current gain

Collector -emitter saturation voltage

VCE(sat)

IC=-500mA, IB= -50mA

-0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=-500mA, IB= -50mA

-1.2

V

Transition frequency

fT

VCE=-6V, IC= -20mA

f=30MHz

150

MHz

CLASSIFICATION OF hFE

Rank

D

E

F

G

H

I

J

Range

64-91

78-112

96-135

112-166

144-202

190-300

300-400

TO-92

DIM

MILLIMETERS

A

B

C

D

F

G

H

J

L

4.70 MAX

4.80 MAX

3.70 MAX

1.00

1.27

0.85

0.45

14.00 0.50

2.30

D

1

2

3

B

G

H

F

E

C

E

0.51 MAX

M

+

_

0.55 MAX

1 EMITTER

2 BASE

3 COLLECTOR

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