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FTC9014 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTC9014 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page  ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) 2011.12. 01 1/2 SEMICONDUCTOR TECHNICAL D ATA FTC9014 Revision No : 0 TO-92 DIM MILLIMETERS A B C D F G H J L 4.70 MAX 4.80 MAX 3.70 MAX 1.00 1.27 0.85 0.45 14.00 0.50 2.30 D 1 2 3 B G H F F E C E 0.51 MAX M + _ 0.55 MAX 1. EMITTER 2. BASE 3. COLLECTOR FTC9014 TRANSISTOR (NPN) FEATURES High Total Power Dissipation.(Pc=0.45W) High hFE and Good Linearity Complementary to FTC9015 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.45 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100 μA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100 μA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 μA Collector cut-off current ICEO VCE=35V, IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA DC current gain hFE VCE=5V, IC= 1mA 60 1000 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1 V Transition frequency fT VCE=5V, IC= 10mA f=30MHz 150 MHz CLASSIFICATION OF hFE(1) D C B A k n a R Range 60-150 100-300 200-600 400-1000 |
Similar Part No. - FTC9014 |
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Similar Description - FTC9014 |
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