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FTC9015 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTC9015 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 1 page  ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) 2011.12. 01 1/1 SEMICONDUCTOR TECHNICAL D ATA FTC9015 Revision No : 0 TO-92 DIM MILLIMETERS A B C D F G H J L 4.70 MAX 4.80 MAX 3.70 MAX 1.00 1.27 0.85 0.45 14.00 0.50 2.30 D 1 2 3 B G H F F E C E 0.51 MAX M + _ 0.55 MAX 1. EMITTER 2. BASE 3. COLLECTOR FTC9015 TRANSISTOR (PNP) FEATURES High Total Power Dissipation.(Pc=0.45W) High hFE and Good Linearity Complementary to FTC9014 CLASSIFICATION OF hFE(1) MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.45 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100 μA, I E=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100 μA, I C=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.05 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.05 μA DC current gain hFE VCE=-5V, IC= -1mA 60 1000 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V Transition frequency fT VCE=-5V, IC= -10mA f=30MHz 100 MHz Rank A B C D Range 60-150 100-300 200-600 400-1000 |
Similar Part No. - FTC9015 |
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Similar Description - FTC9015 |
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