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TIP32 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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TIP32 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page  SEMICONDUCTOR TECHNICAL DATA TIP32 2011. 11. 16 1/2 Revision No : 0 DIM MILLIMETERS TO-220AB A B C D E F H J N O 0.8 ± 0.1 2.7 ± 0.2 2.54 ± 0.2 13.6 ± 0.2 3.8 ± 0.2 10.15 ± 0.15 4.5 ± 0.2 2.7 ± 0.2 15.30 MAX 1.3+0.1/-0.15 0.4 ± 0.15 A F B J E O C H N N D P P 1 BASE 2 COLLECTOR 3 EMITTER 1 2 3 ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) TIP32/32A/32B/32C TRANSISTOR (PNP) FEATURES Medium Power Linear Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter TIP32 TIP32A TIP32B TIP32C Unit VCBO Collector-Base Voltage -40 -60 -80 -100 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -3 A PC Collector Power Dissipation 2 W RθJA Thermal Resistance from Junction to Ambient 62.5 Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ -40 -60 -80 -100 V Parameter Symbol Test conditions M in M ax Unit Collector-base breakdown voltage TIP32 TIP32A TIP32B TIP32C V(BR)CBO IC= -1mA, IE=0 -40 -60 -80 -100 V Collector-emitter breakdown voltage * TIP32 TIP32A TIP32B TIP32C VCEO(sus) IC= -30mA, IB=0 -40 -60 -80 -100 V Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V Collector cut-off current TIP32 TIP32A TIP32B TIP32C ICBO VCB=-40V,IE=0 VCB=-60V, IE=0 VCB=-80V, IE=0 VCB=-100V, IE=0 -200 μA Collector cut-off current TIP32/32A TIP32B/32C ICEO VCE= -30V, IB= 0 VCE= -60V, IB= 0 -0.3 mA Emitter cut-off current IEBO VEB=-5V, IC=0 -1 mA hFE(1) VCE= -4V, IC=-1A 25 DC current gain hFE(2) VCE=-4 V, IC=-3A 15 75 Collector-emitter saturation voltage VCE(sat) IC=-3A, IB=-0.375A -1.2 V Base-emitter voltage VBE(on) VCE=-4V, IC=-3A -1.8 V Transition frequency fT VCE=-10V , IC=-0.5A 3 MHz * Pulse Test: PW ≤300µs, Duty Cycle≤2%. |
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