MMBT2907A datasheet(2/5 Pages) FS

2 / 5 page

ON CHARACTERISTICS

DC Current Gain

(IC = -0.1 mAdc, VCE = -10 Vdc)

(IC = -1.0 mAdc, VCE = -10 Vdc)

(IC = -10 mAdc, VCE = -10 Vdc)

(IC = -150 mAdc, VCE = -10 Vdc)

(IC = -500 mAdc, VCE = -10 Vdc)

HFE

100

−

300

−

Collector−Emitter Saturation Voltage

(IC = -150 mAdc, IB = -15 mAdc)

(IC = -500 mAdc, IB = -50 mAdc)

VCE(sat)

−

-0.4

-1.6

Vdc

Base−Emitter Saturation Voltage

(IC = -150 mAdc, IB = -15 mAdc)

(IC = -500 mAdc, IB = -50 mAdc)

VBE(sat)

−

-1.3

-2.6

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = -50 mAdc, VCE = 20 Vdc, f = 100 MHz)

200

−

MHz

Output Capacitance

(VCB = -10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

8.0

Input Capacitance

(VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

SWITCHING CHARACTERISTICS

Delay Time

(VCC = -30 Vdc, VBE = −0.5 Vdc,

IC = -150 mAdc, IB1 = -15 mAdc)

−

Rise Time

−

Storage Time

(VCC = -30 Vdc, IC = -150 mAdc,

IB1 = IB2 = 15 mAdc)

−

Fall Time

−

1. Device mounted on FR-4 PCB 16*16*0.6mm or on 99.5% alumina 10*8*0.6mm

2. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤2.0%.

MMBT2907A

2011. 12. 06

2/5

Revision No : 0

−

Figure 1. Delay and Rise Time Test Circuit

–16 V

200 ns

1.0 k

200

–30 V

TO OSCILLOSCOPE

RISE TIME < 5.0 ns

+15 V

–6.0 V

1.0 k

1N916

1.0 k

200 ns

–30 V

TO OSCILLOSCOPE

RISE TIME < 5.0 ns

INPUT

Z O= 50 Ω

PRF = 150 PPS

RISE TIME <2.0 ns

P.W. < 200 ns

INPUT

Z o = 50 Ω

PRF = 150 PPS

RISE TIME <2.0 ns

P.W. <200 ns

Figure 2. Storage and Fall Time Test Circuit

MMBT2907A Datasheet(PDF) 2 Page - First Silicon Co., Ltd

MMBT2907A Datasheet(HTML) 2 Page - First Silicon Co., Ltd

Html Pages

1 2 3 4 5

Datasheet Download

Link URL