AUIPS2051L/AUIPS2052G

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3

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters

are referenced to Ground lead. (Tambient=25°C unless otherwise specified).

Symbol

Parameter

Min.

Max.

Units

Vds

Maximum drain to source voltage

-0.3

60

V

Vds cont.

Maximum continuous drain to source voltage

-

35

V

Vin

Maximum input voltage

-0.3

6

V

Isd cont.

Max diode continuous current (limited by thermal dissipation) Rth=125°C/W



1

A

Pd

Maximum power dissipation (internally limited by thermal protection)

W

Rth=60C°/W AUIPS2051L

1” sqr. footprint



2

Rth=100°C/W AUIPS2052G std. footprint



1.25

ESD

Electrostatic discharge voltage (Human body) C=100pF, R=1500



kV

Between drain and source



4

Other combinations



3

Electrostatic discharge voltage (Machine Model) C=200pF,R=0



Between drain and source



0.5

Other combinations



0.3

Tj max.

Max. storage & operating temperature junction temperature

-40

150

°C

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

Rth1

Thermal resistance junction to ambient SOT-223 std. footprint

100



°C/W

Rth2

Thermal resistance junction to ambient SOT-

223 1” sqr. footprint

60



Rth1

Thermal resistance junction to ambient SO-8 std. Footprint

100



1 die active

Rth1

Thermal resistance junction to ambient SO-8 std. footprint

130



2 die active

note : Tj=Power dissipated in one channel x Rth

Recommended Operating Conditions

These values are given for a quick design. For operation outside these conditions, please consult the application notes.

Symbol

Parameter

Min.

Max.

Units

VIH

High level input voltage

4

5.5

VIL

Low level input voltage

0

0.5

Ids

Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V,Rth=100°C/W



0.9

A

Rin

Recommended resistor in series with IN pin to generate a diagnostic

0.5

5

Max. t rise

Max. input rising time



1

µs