FPD2250SOT89 datasheet(4/8 Pages) FILTRONIC

Part #	FPD2250SOT89

Description	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	FILTRONIC [Filtronic Compound Semiconductors]

Direct Link	http://www.filtronic.co.uk/

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FPD2250SOT89

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

Phone: +1 408 850-5790

http://www.filtronic.co.uk/semis

Revised: 01/05/05

Fax: +1 408 850-5766

Email: sales@filcsi.com

•

TYPICAL TUNED RF PERFORMANCE

Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS

= 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output

tuning) for maximum output power at 1dB gain compression.

Power Transfer Characteristric

VDS = 5V IDS = 50% IDSS at f = 1.85 GHz

23.0

24.0

25.0

26.0

27.0

28.0

29.0

30.0

1113151719

Input Power (dBm)

-0.75

-0.25

0.25

0.75

1.25

1.75

2.25

2.75

3.25

3.75

Pout (dBm)

Comp Point

Drain Efficiency and PAE

VDS = 5V IDS = 50% IDSS at f = 1.85 GHz

5.0%

15.0%

25.0%

35.0%

45.0%

55.0%

65.0%

131517

Input Power (dBm)

5.0%

15.0%

25.0%

35.0%

45.0%

55.0%

65.0%

PAE

Eff.

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