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IXTK160N20 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTK160N20 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IXTK160N20 · FEATURES · Drain Source Voltage- : VDSS= 200V(Min) · Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) · Fast Switching · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switch-Mode and Resonant-Mode Power Supplies · DC-DC Converters · AC and DC Motor Drives · Robotics and Servo Controls · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 160 A IDM Drain Current-Single Plused 640 A PD Total Dissipation @TC=25℃ 730 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.17 ℃ /W |
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