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STM6930 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # STM6930
Description  Dual N-Channel Enhancement Mode Field Effect Transistor
PDF  7 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM6930 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BVDSS
=
VGS 0V, ID 250uA
=
55
V
Zero Gate Voltage Drain Current
IDSS
VDS 44V, VGS 0V
=
=
1
Gate-Body Leakage
IGSS
VGS 25V, VDS 0V
=
=
100 nA
ON CHAR ACTER ISTICS b
Gate Threshold Voltage
VGS(th)
VDS VGS, ID = 250uA
=
1.0
2.5
V
Drain-Source On-State R esistance
R DS(ON)
VGS 10V, ID 4.5A
VGS 4.5V, ID 4A
65
On-State Drain Current
ID(ON)
VDS = 5V, VGS = 10V
A
S
Forward Transconductance
FS
g
VDS 5V, ID 4.5A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =25V, VGS = 0V
f =1.0MHZ
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = 30V
ID = 4.8 A
VGS = 10V
R GEN = 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =48V, ID = 4.8 A
VGS =10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
5
45
1.9
uA
m ohm
m ohm
VDS =48V, ID =4.8A,VGS =10V
nC
VDS =48V, ID =4.8A,VGS =4.5V
35
20
60
80
900
19
12
22
5
19
4.5
4
9
55
9
ohm
R g
Gate resistance
VGS =0V, VDS = 0V, f=1.0MHZ
2
25
104
1170
7
25
78
16
29
6
5
12
S T M6930
E LE CTR ICAL CHAR ACTE R IS TICS (TA 25 C unless otherwise noted)



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