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IXTH15N60 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTH15N60 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IXTH15N60 FEATURES · Drain Current ID= 20A@ TC=25℃ · Drain Source Voltage- : VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 0.35Ω(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 60 A PD Total Dissipation @TC=25℃ 300 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.42 ℃ /W |
Similar Part No. - IXTH15N60 |
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Similar Description - IXTH15N60 |
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