Jan. 31, 2020

© 2019 Transphorm Inc. Subject to change without notice.

tp65h480g4lsg.0

1

TP65H480G4JSG

Key Specifications

650

725

560

14

9

Features

 Gen IV technology

 JEDEC-qualified GaN technology

 Robust design, defined by

— Wide gate safety margin

— Transient over-voltage capability

 Reduced crossover loss

 RoHS compliant and Halogen-free packaging

Benefits

 Achieves increased efficiency in both hard- and soft-

switched circuits

— Increased power density

— Reduced system size and weight

— Overall lower system cost

 Easy to drive with commonly-used gate drivers

 GSD pin layout improves high speed design

Applications

 Consumer

 Power adapters

 Low power SMPS

 Lighting

Description

The TP65H480G4JSG 650V, 480mΩ Gallium Nitride (GaN)

FET is a normally-off device. It combines state-of-the-art high

voltage GaN HEMT and low voltage silicon MOSFET

technologies—offering superior reliability and performance.

which uses advanced epi and patented design technologies

to reduce cost through simplified manufacturability while

improving efficiency over silicon via lower gate charge,

output capacitance, crossover loss, and reverse recovery

charge.

Related Literature

 AN0003: Printed Circuit Board Layout and Probing

 AN0007: Recommendations for Vapor Phase Reflow

 AN0009: Recommended External Circuitry for GaN FETs

 AN0012: PQFN Tape and Reel Information

Product Series and Ordering Information

Part Number

Package

Package

Configuration

TP65H480G4JSG-TR*

5x6 PQFN

Source

S

G

D

TP65H480G4JSG

PQFN

(top view)

Cascode Device Structure

Cascode Schematic Symbol

* “-TR” suffix refers to tape and reel. Refer to AN0012 for details.