PJM2306NSA datasheet(2/6 Pages) PJSEMI

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Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID =250µA

Gate-Body Leakage

IGSS

VDS =0V, VGS =±20V

±100

Drain-Source On-Resistance Note3

RDS(on)

VGS =10V, ID =3.5A

mΩ

VGS =4.5V, ID =2.8A

Forward Transconductance Note3

gfs

VDS =4.5V, ID =2.5A

Input Capacitance

Ciss

VDS =15V,VGS =0V,f =1MHz

305

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-On Delay Time

td(on)

VDD=15V, RL=15Ω, ID ≈1A,

VGEN=10V,Rg=6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

PJM2306NSA

N- Enhancement Mode Field Effect Transistor

2 / 6

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Revision：1.1 Dec-2018

Electrical Characteristics

TA=25℃ unless otherwise noted

Static Characteristics

Zero Gate Voltage Drain Current

IDSS

VDS =30V, VGS =0V

0.5

µA

Gate-Threshold Voltage Note3

VGS(th)

VDS =VGS, ID =250µA

Dynamic Characteristics

Switching Characteristics

Diode Forward Voltage

VSD

IS=1.25A,VGS=0V

0.8

1.2

Drain-Source Diode Characteristics

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Total Gate Charge

VDS =15V,VGS =10V,ID =2.5A

Gate-Source Charge

Qgs

1.6

Gate-Drain Charge

Qgd

0.6

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