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PJM2319PSA Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # PJM2319PSA
Description  P-Enhancement Field Effect Transistor
PDF  8 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM2319PSA Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM2319PSA
P-Enhancement Field Effect Transistor
www.pingjingsemi.com
2 / 8
Revision：1.0 Mar-2018
Electrical Characteristics
Ratings at TJ = 25℃ unless otherwise specified.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Drain-to-Source Breakdown Voltage
-BVDSS
VGS = 0 V, ID = -250uA
40
-
-
V
Zero Gate Voltage Drain Current
-IDSS
VDS =-40 V, VGS = 0V
-
-
1
uA
Gate-to-Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20V
-
-
±100
nA
Gate Threshold Voltage Note3
-VGS(th)
VGS = VDS, ID = -250uA
1
-
3
V
Drain-to-Source On-Resistance Note3
RDS(on)
VGS = -10V, ID = -3.1A
-
66
80
mΩ
VGS = -4.5V, ID = -2.6A
-
90
120
Forward Transconductance Note3
gFS
VDS = -15 V, ID = -3.1A
-
10
-
S
Dynamic Characteristics
Input Capacitance
Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = -20 V
-
595
-
pF
Output Capacitance
Coss
-
76
-
Reverse Transfer Capacitance
Crss
-
61
-
Total Gate Charge
Qg
VDS =-20V, VGS =-4.5V,
ID = -3.1A
-
7
11
nC
Gate-Source Charge
Qgs
-
2.5
-
Gate-Drain Charge
Qgd
-
3.2
-
Turn-On Delay Time
td(on)
VDS =-20V, ID=-2.5A,
VGEN =-10V, RL =8Ω,
-
8
16
ns
Turn-On Rise Time
tr
-
9
18
Turn-Off Delay Time
td(off)
-
20
30
Turn-Off Fall Time
tf
-
8
16
Source-Drain Diode Characteristics
Body Diode Voltage
-VSD
IS=-2.5A, VGS=0V
0.8
1.5
V
Continuous Source-Drain Diode Current
-IS
A
1
--
--
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface mounted on FR4 board，t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.



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