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PJM2333PSC Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM2333PSC Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 7 page  PJM2333PSC P-Channel Enhancement Mode Power MOSFET www.pingjingsemi.com 1 / 7 Revison：1.0 Oct-2019 Features VDS=-12V, ID=-6A, RDS(on)<45mΩ(Max.)@VGS=-2.5V RDS(on)<30mΩ(Max.)@VGS=-4.5V High power and current handing capability Surface mount package Application 1.Gate 2.Source 3.Drain Marking: Q33 PWM application Load switch Power Management Absolute Maximum Ratings Ratings at 25 ℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±12 V Drain Current -Continuous ID -6 A Drain Current -Pulsed Note1 IDM -20 A Power Dissipation PD 1.25 W Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55 to 150 ℃ Thermal Characteristics Parameter Symbol Limit Unit Thermal Resistance,Junction-to-Ambient Note2 RθJA 100 ℃/W SOT-23-3 1 2 Gate Source Schematic Diagram Drain 3 |
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