2SD882SQ datasheet(2/3 Pages) PJSEMI

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2SD882SQ

Silicon NPN Power Transistor

www.pingjingsemi.com

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Revision:1.0 May-2018

Electrical Characteristics (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE = 2 V, IC = 20 mA

at VCE = 2 V, IC = 1 A

Current Gain Group

hFE

100

160

200

120

200

320

400

Collector Base Cutoff Current

at VCB = 30 V

ICBO

µA

Emitter Base Cutoff Current

at VEB = 3 V

IEBO

µA

Collector Emitter Saturation Voltage

at IC = 2 A, IB = 0.2 A

VCE(sat)

0.5

Base Emitter Saturation Voltage

at IC = 2 A, IB = 0.2 A

VBE(sat)

Gain Bandwidth Product

at VCE = 5 V, IC = 0.1 A

MHz

Output Capacitance

at VCB = 10 V, f = 1 MHz

Cob

Typical Characteristic Curves

DC CURRENT GAIN, BASE TO EMITTER

VOLTAGE vs. COLLECTOR CURRENT

1000

100

0.001

0.01 0.03 0.1

0.3

I C-Collector Current-A

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

VCE-Collector to Emit o

ter Voltage-V

0.4

0.8

1.2

1.6

2.0

I B=1mA

Pulse Test

300

0.003

0.1

0.3

0.6

VCE=2.0V

Pulse Test

h FE

VBE

I C-Collector Current-A

BASE AND COLLECTOR SATURATION

VOLTAGE vs. COLLECTOR CURRENT

0.03

0.003

0.01

0.003

VBE(sat)

0.1

0.06

0.3

0.6

VCE(sat)

0.01 0.03 0.1 0.3

I C=10.IB

Pulse Test

0.006

0.001

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