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2SD1664SQ Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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2SD1664SQ Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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2 / 4 page ![]() 2 / 4 Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 3 V, IC = 100 mA Current Gain Group Q R HFE 120 180 - - 270 390 Collector Base Cutoff Current at VCB = 20 V ICBO - - 0.5 μA Emitter Base Cutoff Current at VEB = 4 V IEBO - - 0.5 μA Emitter Base Breakdown Voltage at IE = 50 μA V(BR)EBO 5 - - V Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA VCE(sat) - - 0.4 V Transition Frequency at VCE = 5 V, IC = 50 mA, f = 100 MHz fT - 150 - MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz Cob - 15 - pF Collector Base Breakdown Voltage at IC = 50 μA V(BR)CBO 40 - - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 32 - - V 2SD1664SQ NPN Transistor - - P 82 - 180 - www.pingjingsemi.com Revision:1.0 Jun-2019 |
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