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MMBT2222 Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # MMBT2222
Description  NPN Silicon Epitaxial Planar Transistor
PDF  4 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

MMBT2222 Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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MMBT2222/MMBT2222A
NPN Silicon Epitaxial Planar Transistor
1 / 4
www.pingjingsemi.com
Revis
ion：1.0 Oct-2017
Fe
atures
For switching and amplifier applications
SOT-23
Absolute Maximum Ratings (Ta=25℃ )
Parameter
Symbol
Value
Unit
Collector Base Voltage
MMBT2222
MMBT2222A
VCBO
60
75
V
Collector Emitter Voltage
MMBT2222
MMBT2222A
VCEO
30
40
V
Emitter Base Voltage
MMBT2222
MMBT2222A
VEBO
5
6
V
Collector Current
IC
600
mA
Power Dissipation
Ptot
350
mW
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTGg
- 55 to + 150
℃
Characteristics (Ta=25℃ )
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 10 V, IC = 0.1 mA
at VCE = 10 V, IC = 1 mA
at VCE = 10 V, IC = 10 mA
at VCE = 1 V, IC = 150 mA
at VCE = 10 V, IC = 150 mA
at VCE = 10 V, IC = 500 mA
MMBT2222
MMBT2222A
hFE
hFE
hFE
hFE
hFE
hFE
hFE
35
50
75
50
100
30
40
-
-
-
-
300
-
-
-
-
-
-
-
-
-
Collector Base Cutoff Current
at VCB = 50 V
MMBT2222
at VCB = 60 V
MMBT2222A
ICBO
-
-
10
10
nA
Emitter Base Cutoff Current
at VEB = 3 V
IEBO
-
100
nA
Collector Base Breakdown Voltage
at IC = 10 µA
MMBT2222
MMBT2222A
V(BR)CBO
60
75
-
-
V
1
2
3
1.B
2.E
3.C


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