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MMBTRC116SS Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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MMBTRC116SS Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 3 page ![]() Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Resistor Values Type R1 (KΩ) R2 (KΩ) MMBTRC116SS 1 10 MMBTRC117SS 2.2 2.2 MMBTRC118SS 2.2 10 MMBTRC119SS 4.7 10 MMBTRC120SS 10 4.7 MMBTRC121SS 47 10 MMBTRC122SS 100 100 Absolute Maximum Ratings (Ta = 25 ℃) Parameter Symbol Value Unit Output Voltage VO 50 V Input Voltage MMBTRC116SS VI 10, - 5 V MMBTRC117SS 12, - 10 MMBTRC118SS 12, - 5 MMBTRC119SS 20, - 7 MMBTRC120SS 30, - 10 MMBTRC121SS 40, - 15 MMBTRC122SS 40, - 10 Output Current IO 100 mA Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O C Storage Temperature Range TStg - 55 to + 150 O C Base (Input) Emitter (Common) R2 R1 Collector (Output) MMBTRC116SS~MMBTRC122SS NPN Digital Transistor 1.Base 2.Emitter 3.Collector SOT-23 (TO-236) 1 / 3 www.pingjingsemi.com Revision:1.0 Jan-2018 Marking 16BR 17BR 18BR 19BR 20BR 21BR 22BR |
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