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MPSA94SQ Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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MPSA94SQ Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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2 / 4 page ![]() MPSA94SQ PNP Silicon Expitaxial Planar Transistor 2 / 4 www.pingjingsemi.com Revision:1.0 May-2018 Electrical Characteristics(Ta=25℃) Parameter Symbol Min. Max. Units DC Current Gain at -IC = 1 mA, -VCE = 10 V at -IC = 10 mA, -VCE = 10 V at -IC = 50 mA, -VCE = 10 V at -IC = 100 mA, -VCE = 10 V hFE hFE hFE hFE 70 80 70 60 - 300 - - - - - - Collector Base Cutoff Current at -VCB = 300 V -I CBO - 0.1 µA Emitter Base Cutoff Current at -VEB = 4 V -I EBO - 0.1 µA Collector Emitter Cutoff Current at -VCE = 400 V -I CES 1 µA Collector Base Breakdown Voltage at -IC = 100 µA -V (BR)CBO 400 - V Collector Emitter Breakdown Voltage at -IC = 1 mA -V (BR)CEO 400 - V Emitter Base Breakdown Voltage at -IE = 100 µA -V (BR)EBO 6 - V Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA -V CE(sat) - - 0.2 0.5 V Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA -V BE(sat) - 0.75 V Collector Output Capacitance at -VCB = 20 V, f = 1 MHz C ob - 7 pF - |
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