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BAS40 Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # BAS40
Description  Schottky Barrier Diodes
PDF  3 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

BAS40 Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

  BAS40 Datasheet HTML 1Page - Dongguan Pingjingsemi Technology Co., Ltd, BAS40 Datasheet HTML 2Page - Dongguan Pingjingsemi Technology Co., Ltd, BAS40 Datasheet HTML 3Page - Dongguan Pingjingsemi Technology Co., Ltd,  
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Absolute Maximum Ratings (T
a = 25℃ )
Parameter
Symbol
Unit
Repetitive Peak Reverse Voltage
VRRM
40
V
Average Rectified Forward Current
IF(AV)
200
mA
Non-Repetitive Peak Forward Surge Current
at t = 8.3ms
IFSM
600
mA
Power Dissipation
PD
200
mW
Thermal Resistance Junction to Ambient Air
RJA
625
O
C/W
Junction Temperature
TJ
150
O
C
Storage Temperature Range
TSTG
- 55 to + 150
O
C
Characteristics at TA = 25℃
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 1 mA
at IF = 40 mA
VF
-
-
0.38
1
V
Reverse Current
at VR = 30 V
IR
-
0.2
μA
Breakdown Voltage
at IR =10 μA
VR
40
-
V
Total Capacitance
at VR = 0 V, f = 1 MHz
Ctot
-
5
pF
Reverse Recovery Time
at IF = 10 mA, IR = 10 mA, IRR = 1 mA, RL= 100 Ω
trr
-
5
ns
1
3
2
3
1
2
1
3
2
2
1
3
BAS40
BAS40-04
BAS40-05
BAS40-06
BAS40/-04/-05/-06
Schottky Barrier Diodes
1 / 3
SOT-23
Value
Equivalent Schematic Diagram
Marking Information:
BAS40-04
BAS40-05
BAS40-06
BAS40
B4
B44
B45
B46
www.pingjingsemi.com
Revision：1.0 Apr-2019
Features
Low Forward Voltage
Fast Switching


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