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F8NE65 Datasheet(PDF) 1 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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F8NE65 Datasheet(HTML) 1 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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1 / 11 page  ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 1 of 11 8NE65 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤1.4Ω) ● Low Gate Charge(Typical Data:24nC) ● Low Reverse Transfer Capacitances(Typical:5.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔV DS Test 3 Applications ● Used in Various Power Switching Circuit for System Miniaturization and Higher Efficiency. ● Power Switch Circuit of Electron Ballast and Adaptor. 7.5A 650V N-channel Enhancement Mode Power MOSFET 4 Electrical Characteristics 4.1 Absolute Maximum Rating (Tc=25℃,unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID（T=25℃） （T=100℃） 7.5 A 4.8 A Drain Current(Pulsed) (Note 1) IDM 30 A Single Pulse Avalanche Energy (Note 5) EAS 350 mJ Peak Diode Recovery dv/dt (Note 6) dv/dt 5 V/ns Total Dissipation Ta=25℃ Ptot 2 W TC=25℃ Ptot 100 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55～150 ℃ Maximum Temperature for Soldering TL 300 ℃ 4.2 Thermal Characteristics PARAMETER SYMBOL VALUE UNIT Thermal Resistance Junction to Case-sink RthJC 1.25 ℃/W Thermal Resistance Junction to Ambient RthJA 62.5 ℃/W VDSS = 650V RDS(on) （TYP)= 1.2Ω ID = 7.5A TO-220C 1 2 3 4 5 6 7 8 A B C D 8 7 6 5 4 3 2 1 D C B A Ti t le N u m b er R ev i s io n Si ze D D ate: 1 0 -A p r-2 0 1 7 Sh eet o f Fi l e: D :\ Pr og ram Fi l es \p ro tel 99 s e\文件夹\ W X D H D raw n B y : 3 1 2 G S D |
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