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B4NE65 Datasheet(PDF) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

Part # B4NE65
Description  4A 650V N-channel Enhancement Mode Power MOSFET
PDF  13 Pages
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Manufacturer  WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]
Direct Link  http://www.jswxdh.cn
Logo WXDH - Jiangsu Donghai Semiconductor Technology Co.,Ltd

B4NE65 Datasheet(HTML) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

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ROUM Semiconductor Technology CO.,LTD.
Rev. 1.0
www.roum.cn
Page 2 of 13
I4NE65
4.2 Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal Resistance Junction to Case-sink
RthJC
1.67
℃/W
Thermal Resistance Junction to Ambient
RthJA
62.5
℃/W
4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Condition
Value
Units
Min
Typ
Max
Off Characteristics
Drain-source Breakdown
Voltage
BVDSS
ID=250μA,VGS=0V
650
--
--
V
Drain-to-Source Leakage
Current
IDSS
VDS=650V,VGS=0V,TC=25℃
--
--
1
μA
VDS=520V,VGS=0V,TC=125℃
--
--
100
μA
Gate-to-Source
Forward
Leakage
IGSSF
VGS=+20V
--
--
10
μA
Gate-to-Source
Reverse
Leakage
IGSSR
VGS=-20V
--
--
-10
μA
On Characteristics
(Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
--
4
V
Drain-source on
Resistance
RDS(on)
VGS=10V,ID=2A
--
2.3
2.8
Ω
Dynamic Characteristics
(Note 4)
Forward Transfer
Conductance
gfs
VDS=15V,ID=2A
--
3.5
--
S
Input Capacitance
Ciss
VGS=0V,VDS=25V,f=1.0MHz
--
560
--
pF
Output Capacitance
Coss
--
50
--
Reverse Transfer
Capacitance
Crss
--
2.2
--
Switching Characteristics
(note4)
Turn-on Delay Time
td(on)
ID=4A,
VDD=325V,
RG=10Ω
--
14
--
nS
Turn-on Rise Time
tr
--
22
--
nS
Turn-off Delay Time
td(off)
--
29
--
nS
Turn-off Fall Time
tf
--
15
--
nS
Total Gate Charge
Qg
ID=4A,VDD=520V,VGS=10V
--
13
--
nC
Gate-to-Source Charge
Qgs
--
2.7
--
Gate-to-Drain(“Miller”)
Charge
Qgd
--
5.5
--
Drain-Source Diode Characteristics
Diode Forward Voltage
(N
ote 3)
VFSD
VGS=0V,IS=4A
--
--
1.5
V
Diode Forward Current
(N
ote 2)
IS
--
--
4
A



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