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LP4056H Datasheet(PDF) 6 Page - Lowpower Semiconductor inc |
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LP4056H Datasheet(HTML) 6 Page - Lowpower Semiconductor inc |
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6 / 7 page ![]() LP4056H – 00 Jan.-2019 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 6 of 7 Preliminary Datasheet LP4056H Power Dissipation The conditions that cause the LP4056H to reduce charge current through thermal feedback can be approximated by considering the power dissipated in the IC. Nearly all of this power dissipation is generated by the internal MOSFET—this is calculated to be approximately: PD=(VIN-VBAT) • IBAT where PD is the power dissipated, VIN is the input supply voltage, VBAT is the battery voltage and IBAT is the charge current. The approximate ambient temperature at which the thermal feedback begins to protect the IC is: TA=125℃-PDθJA TA=125℃-(VIN-VBAT) • IBAT • θJA . |
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