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2N04H4 Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Part # 2N04H4
Description  N-Channel 40 V (D-S) MOSFET
PDF  9 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

2N04H4 Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
Current De-Rating
10
100
1000
10000
0.5
0.8
1.1
1.4
1.7
2.0
-50 -25
0
255075
100 125 150 175
Axis Title
T
J - Junction Temperature (°C)
2nd line
I
D = 30 A
V
GS = 10 V
V
GS = 4.5 V
10
100
1000
10000
0
0.01
0.02
0.03
0.04
0.05
2468
10
Axis Title
V
GS - Gate-to-Source Voltage (V)
2nd line
T
J = 25 °C
T
J = 125 °C
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
Axis Title
V
SD - Source-to-Drain Voltage (V)
2nd line
T
J = 150 °C
T
J = 25 °C
10
100
1000
10000
-2.0
-1.4
-0.8
-0.2
0.4
1.0
-50 -25
0
25
50
75
100 125 150 175
Axis Title
T
J - Temperature (°C)
2nd line
I
D = 5 mA
I
D = 250 μA
10
100
1000
10000
105
110
115
120
125
-50 -25
0
25
50
75
100 125 150 175
Axis Title
T
J - Temperature (°C)
2nd line
I
D = 250 μA
10
100
1000
10000
0
30
60
90
120
150
025
50
75
100
125
150
175
Axis Title
T
C - Case Temperature (°C)
2nd line
2N04H4 TO263
www.VBsemi.tw
E-mail：China@VBsemi TEL:86-755-83251052
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