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WSF10N40 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF10N40 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 5 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 400 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃, ID = 250uA --- 0. 3 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V,ID=4.5A --- m Ω VGS= 8.0V , ID=3A --- VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.0 --- 4.0 V △ VGS(th) VGS(th) Temperature Coefficient --- -5.52 --- mV/℃ IDSS Drain-Source Leakage Current VDS= 320V , VGS=0V , TJ=25℃ --- --- 10 uA VDS= 320V , VGS=0V , TJ=55℃ --- --- 100 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS= 30V , ID=4.5A --- 8.0 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.6 3.2 Ω Qg Total Gate Charge (10V) VDS= 320V , VGS=10V , ID=9A --- 25 35 nC Qgs Gate-Source Charge --- 4.0 6.0 Qgd Gate-Drain Charge --- 10.5 12.1 Td(on) Turn-On Delay Time VDD= 200V , VGS=10V , RG=5Ω ID= 9A --- 12.4 --- ns Tr Rise Time --- 20.1 --- Td(off) Turn-Off Delay Time --- 38.5 --- Tf Fall Time --- 10.8 --- Ciss Input Capacitance VDS= 25V , VGS=0V , f=1MHz --- 740 --- pF Coss Output Capacitance --- 83 --- Crss Reverse Transfer Capacitance --- 9.0 --- Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS= 10A 100 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 9.0 A ISM Pulsed Source Current 2,6 --- --- 35 A VSD Diode Forward Voltage 2 VGS=0V , IS= 4.5A --- --- 1.5 V trr Reverse Recovery Time IF= 9A , dI/dt=100A/µs --- 320 --- nS Qrr Reverse Recovery Charge --- 1345 --- nC Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper,t<10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS= 10A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Guaranteed Avalanche Characteristics N-Ch MOSFET WSF10N40 Page 2 www.winsok.tw Dec.2014 515 607 1100 2000 |
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