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WSF10N40 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSF10N40
Description  N-Ch MOSFET
PDF  5 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF10N40 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF10N40 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF10N40 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF10N40 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF10N40 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF10N40 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
400
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃, ID = 250uA
---
0.
3
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V,ID=4.5A
---
m
Ω
VGS=
8.0V , ID=3A
---
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
2.0
---
4.0
V
VGS(th)
VGS(th) Temperature Coefficient
---
-5.52
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=
320V , VGS=0V , TJ=25℃
---
---
10
uA
VDS=
320V , VGS=0V , TJ=55℃
---
---
100
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=
30V , ID=4.5A
---
8.0
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.6
3.2
Ω
Qg
Total Gate Charge (10V)
VDS=
320V , VGS=10V , ID=9A
---
25
35
nC
Qgs
Gate-Source Charge
---
4.0
6.0
Qgd
Gate-Drain Charge
---
10.5
12.1
Td(on)
Turn-On Delay Time
VDD=
200V , VGS=10V , RG=5Ω
ID=
9A
---
12.4
---
ns
Tr
Rise Time
---
20.1
---
Td(off)
Turn-Off Delay Time
---
38.5
---
Tf
Fall Time
---
10.8
---
Ciss
Input Capacitance
VDS=
25V , VGS=0V , f=1MHz
---
740
---
pF
Coss
Output Capacitance
---
83
---
Crss
Reverse Transfer Capacitance
---
9.0
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=
10A
100
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
9.0
A
ISM
Pulsed Source Current
2,6
---
---
35
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=
4.5A
---
---
1.5
V
trr
Reverse Recovery Time
IF=
9A , dI/dt=100A/µs
---
320
---
nS
Qrr
Reverse Recovery Charge
---
1345
---
nC
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=
10A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Guaranteed Avalanche Characteristics
N-Ch MOSFET
WSF10N40
Page 2
www.winsok.tw
Dec.2014
515
607
1100
2000



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