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WSF40P03 Datasheet(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF40P03 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 6 page  BVDSS RDSON ID -30V 18mΩ -40A Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available General Description Features Applications Power Magagement in Desktop DC/DC Converters. Load Switch TO-252 Pin Configuration Product Summery Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ± 25 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V -40 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V -25 A ID@TA=25℃ Continuous Drain Current, VGS @ -10V -9.6 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V -7.7 A Pulsed Drain Current -160 A Single Pulse Avalanche Energy 28 mJ Avalanche Current -20 A PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit Thermal Resistance Junction-Ambient --- 50 ℃ /W RθJC Thermal Resistance Junction-Case --- 2.9 ℃ /W Absolute Maximum Ratings Thermal Data The WSF40P03 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WSF40P03 meet the RoHS and Green Product requirement with full function reliability approved. WSF40P03 P-Ch MOSFET Page 1 www.winsok.tw Dec.2014 Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC). Note c：Surface Mounted on 1in2 pad area. IDM a RqJAc IAS b EAS b |
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